Продукція > ON SEMICONDUCTOR > NTMFS5C604NLT1G-UIL3

NTMFS5C604NLT1G-UIL3 ON Semiconductor


ntmfs5c604nlt1g-uil3-d.pdf Виробник: ON Semiconductor
MOSFET-Power Single N-channel
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис NTMFS5C604NLT1G-UIL3 ON Semiconductor

Description: MOSFET N-CH 60V 40A/287A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.

Інші пропозиції NTMFS5C604NLT1G-UIL3

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
NTMFS5C604NLT1G-UIL3 NTMFS5C604NLT1G-UIL3 Виробник : onsemi Description: MOSFET N-CH 60V 40A/287A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
товар відсутній
NTMFS5C604NLT1G-UIL3 NTMFS5C604NLT1G-UIL3 Виробник : onsemi Description: MOSFET N-CH 60V 40A/287A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
товар відсутній
NTMFS5C604NLT1G-UIL3 NTMFS5C604NLT1G-UIL3 Виробник : onsemi NTMFS5C604NLT1G_UIL3_D-3134919.pdf MOSFET NFET SO8FL 60V 289A 1.2MO
товар відсутній