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NTMFS4C10NBT1G onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 16.4A/46A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 2.51W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Description: MOSFET N-CH 30V 16.4A/46A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 2.51W (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
на замовлення 1498 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 93.48 грн |
10+ | 73.76 грн |
100+ | 57.41 грн |
500+ | 45.66 грн |
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Технічний опис NTMFS4C10NBT1G onsemi
Description: MOSFET N-CH 30V 16.4A/46A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V, Power Dissipation (Max): 2.51W (Ta), 23.6W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V.
Інші пропозиції NTMFS4C10NBT1G за ціною від 33.94 грн до 100.01 грн
Фото | Назва | Виробник | Інформація |
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NTMFS4C10NBT1G | Виробник : onsemi |
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на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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NTMFS4C10NBT1G | Виробник : ON Semiconductor |
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товар відсутній |
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NTMFS4C10NBT1G | Виробник : ON Semiconductor | NFET SO8FL 30V 46A 6.96M Ohm |
товар відсутній |
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NTMFS4C10NBT1G | Виробник : onsemi |
Description: MOSFET N-CH 30V 16.4A/46A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V Power Dissipation (Max): 2.51W (Ta), 23.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
товар відсутній |