NTMFS4898NFT3G onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 13.2A/117A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 12 V
Description: MOSFET N-CH 30V 13.2A/117A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 930mW (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 12 V
на замовлення 5671 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 460+ | 46.08 грн |
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Технічний опис NTMFS4898NFT3G onsemi
Description: MOSFET N-CH 30V 13.2A/117A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Power Dissipation (Max): 930mW (Ta), 73.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 12 V.
Інші пропозиції NTMFS4898NFT3G за ціною від 66.23 грн до 66.23 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
| NTMFS4898NFT3G | Виробник : ONSEMI |
 Description: ONSEMI - NTMFS4898NFT3G - MOSFET,N CH,W DIODE,30V,13.2A,SO8 FLtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 5671 шт: термін постачання 21-31 дні (днів) |
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| NTMFS4898NFT3G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 30V 22.5A 5-Pin(4+Tab) SO-FL T/R |
товар відсутній |
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NTMFS4898NFT3G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 30V 22.5A 5-Pin(4+Tab) SO-FL T/R |
товар відсутній |
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| NTMFS4898NFT3G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 30V 22.5A 5-Pin(4+Tab) SO-FL T/R |
товар відсутній |
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NTMFS4898NFT3G | Виробник : onsemi |
Description: MOSFET N-CH 30V 13.2A/117A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), 117A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 930mW (Ta), 73.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 12 V |
товар відсутній |