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NTMFS006N12MCT1G onsemi
на замовлення 11788 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 143.1 грн |
25+ | 140.25 грн |
100+ | 121.26 грн |
250+ | 120.57 грн |
500+ | 115.69 грн |
1500+ | 98.26 грн |
3000+ | 92.69 грн |
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Технічний опис NTMFS006N12MCT1G onsemi
Description: POWER MOSFET, 120V SINGLE N CHAN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 46A, 10V, Power Dissipation (Max): 2.7W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 260µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 60 V.
Інші пропозиції NTMFS006N12MCT1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTMFS006N12MCT1G | Виробник : ON Semiconductor |
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на замовлення 1460 шт: термін постачання 14-28 дні (днів) |
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NTMFS006N12MCT1G | Виробник : ON Semiconductor |
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товар відсутній |
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NTMFS006N12MCT1G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 46A, 10V Power Dissipation (Max): 2.7W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 260µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 60 V |
товар відсутній |
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NTMFS006N12MCT1G | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 46A, 10V Power Dissipation (Max): 2.7W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 260µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3365 pF @ 60 V |
товар відсутній |