NTMFD4C20NT3G ON Semiconductor

Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.09W, 1.15W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A, Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V, Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical).