Технічний опис NTLUS3C18PZTAG ON Semiconductor
Description: MOSFET P-CH 12V 4.4A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-UDFN (1.6x1.6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V.
Інші пропозиції NTLUS3C18PZTAG
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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NTLUS3C18PZTAG | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V |
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