Технічний опис NTLLD4901NFTWG ON Semiconductor
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, 810mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A, Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V, Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-WDFN (3x3).
Інші пропозиції NTLLD4901NFTWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTLLD4901NFTWG | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 30V 11A/13A 8-Pin WDFN EP T/R |
товар відсутній |
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NTLLD4901NFTWG | Виробник : onsemi |
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 810mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3x3) |
товар відсутній |