NTH4L028N170M1 onsemi

Description: SIC MOSFET 1700 V 28 MOHM M1 SER, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 81A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 60A, 20V, Power Dissipation (Max): 535W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 800 V.