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NTE634 NTE Electronics, Inc
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Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Bag
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Capacitance @ Vr, F: 100pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 708 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10+ | 72.31 грн |
20+ | 66.12 грн |
30+ | 62.67 грн |
40+ | 55.51 грн |
50+ | 54.21 грн |
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Технічний опис NTE634 NTE Electronics, Inc
Description: DIODE AVALANCHE 200V 2A SOD57, Packaging: Bag, Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Avalanche, Capacitance @ Vr, F: 100pF @ 0V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Інші пропозиції NTE634
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTE634 | Виробник : NTE Electronics |
![]() Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; SOD57; Ufmax: 780mV; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Max. load current: 20A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 0.1nF Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 0.78V Leakage current: 0.15mA Reverse recovery time: 25ns кількість в упаковці: 1 шт |
товар відсутній |
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NTE634 | Виробник : NTE Electronics |
![]() Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; SOD57; Ufmax: 780mV; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Max. load current: 20A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 0.1nF Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 0.78V Leakage current: 0.15mA Reverse recovery time: 25ns |
товар відсутній |