NTE517 NTE Electronics, Inc
Виробник: NTE Electronics, IncDescription: DIODE GEN PURP 15KV 550MA AXIAL
Packaging: Bag
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 550mA
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15000 V
Voltage - Forward (Vf) (Max) @ If: 14 V @ 550 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15000 V
на замовлення 2871 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 507.88 грн |
| 10+ | 464.91 грн |
| 20+ | 440.02 грн |
| 50+ | 390.27 грн |
| 100+ | 380.65 грн |
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Технічний опис NTE517 NTE Electronics, Inc
Description: DIODE GEN PURP 15KV 550MA AXIAL, Packaging: Bag, Package / Case: Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 550mA, Supplier Device Package: Axial, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 15000 V, Voltage - Forward (Vf) (Max) @ If: 14 V @ 550 mA, Current - Reverse Leakage @ Vr: 5 µA @ 15000 V.
Інші пропозиції NTE517
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
|---|---|---|---|---|---|
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NTE517 | Виробник : NTE Electronics, Inc. |
Rectifier Diode 15KV 0.55A 2-Pin |
товар відсутній |
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NTE517 | Виробник : NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 15kV; 550mA; Ifsm: 50A; DO41; Ufmax: 14V Mounting: THT Features of semiconductor devices: high voltage Max. forward impulse current: 50A Reverse recovery time: 100ns Semiconductor structure: single diode Load current: 550mA Max. forward voltage: 14V Max. off-state voltage: 15kV Case: DO41 Type of diode: rectifying Leakage current: 5µA кількість в упаковці: 1 шт |
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NTE517 | Виробник : NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 15kV; 550mA; Ifsm: 50A; DO41; Ufmax: 14V Mounting: THT Features of semiconductor devices: high voltage Max. forward impulse current: 50A Reverse recovery time: 100ns Semiconductor structure: single diode Load current: 550mA Max. forward voltage: 14V Max. off-state voltage: 15kV Case: DO41 Type of diode: rectifying Leakage current: 5µA |
товар відсутній |