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NTE2382 NTE Electronics, Inc
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Description: MOSFET N-CHANNEL 100V 9.2A TO220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 659 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 369.51 грн |
10+ | 338 грн |
20+ | 320.17 грн |
50+ | 283.74 грн |
100+ | 277.46 грн |
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Технічний опис NTE2382 NTE Electronics, Inc
Description: MOSFET N-CHANNEL 100V 9.2A TO220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.
Інші пропозиції NTE2382
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTE2382 | Виробник : NTE Electronics, Inc. |
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товар відсутній |
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NTE2382 | Виробник : NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 50W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.5A Pulsed drain current: 37A Power dissipation: 50W Case: TO220 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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![]() |
NTE2382 | Виробник : NTE Electronics |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 50W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.5A Pulsed drain current: 37A Power dissipation: 50W Case: TO220 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhanced |
товар відсутній |