![NTDV20N06T4G NTDV20N06T4G](https://media.digikey.com/Renders/On%20Semi%20Renders/DPAK_369C.jpg)
NTDV20N06T4G onsemi
![ntd20n06-d.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
165+ | 235.41 грн |
Відгуки про товар
Написати відгук
Технічний опис NTDV20N06T4G onsemi
Description: MOSFET N-CH 60V 20A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V, Power Dissipation (Max): 1.88W (Ta), 60W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V.
Інші пропозиції NTDV20N06T4G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
NTDV20N06T4G | Виробник : ON Semiconductor |
![]() |
на замовлення 1515 шт: термін постачання 21-30 дні (днів) |
|
![]() |
NTDV20N06T4G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V Power Dissipation (Max): 1.88W (Ta), 60W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V |
товар відсутній |