Технічний опис NTD5C688NLT4G ON Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 77A; 1.7W; DPAK, Mounting: SMD, Case: DPAK, Kind of package: reel; tape, On-state resistance: 32mΩ, Type of transistor: N-MOSFET, Power dissipation: 1.7W, Polarisation: unipolar, Gate charge: 0.9nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 77A, Drain-source voltage: 60V, Drain current: 5.3A, кількість в упаковці: 1 шт.
Інші пропозиції NTD5C688NLT4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NTD5C688NLT4G | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 60V 7.5A Automotive 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|
| NTD5C688NLT4G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 77A; 1.7W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 77A Drain-source voltage: 60V Drain current: 5.3A кількість в упаковці: 1 шт |
товар відсутній |
||
| NTD5C688NLT4G | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 77A; 1.7W; DPAK Mounting: SMD Case: DPAK Kind of package: reel; tape On-state resistance: 32mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 77A Drain-source voltage: 60V Drain current: 5.3A |
товар відсутній |