NTD4909NA-35G onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
Description: MOSFET N-CH 30V 8.8A/41A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V
на замовлення 23773 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1101+ | 18.79 грн |
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Технічний опис NTD4909NA-35G onsemi
Description: MOSFET N-CH 30V 8.8A/41A IPAK, Packaging: Bulk, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: IPAK, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V.
Інші пропозиції NTD4909NA-35G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTD4909NA-35G | Виробник : onsemi |
Description: MOSFET N-CH 30V 8.8A/41A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 41A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: IPAK Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 15 V |
товар відсутній |
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NTD4909NA-35G | Виробник : ON Semiconductor |
 MOSFET NFET DPAK 30V 41A 8 mOhm |
товар відсутній |