![NTD4804NT4G NTD4804NT4G](https://www.mouser.com/images/mouserelectronics/lrg/TO_252_AA_3_ITP_t.jpg)
на замовлення 2394 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 122.24 грн |
10+ | 108.84 грн |
100+ | 73.68 грн |
500+ | 60.7 грн |
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Технічний опис NTD4804NT4G onsemi
Description: MOSFET N-CH 30V 14.5A/124A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V, Power Dissipation (Max): 1.43W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V.
Інші пропозиції NTD4804NT4G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTD4804NT4G | Виробник : onsemi |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 1.43W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V |
на замовлення 21450 шт: термін постачання 21-31 дні (днів) |
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NTD4804NT4G | Виробник : ON Semiconductor |
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товар відсутній |
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NTD4804NT4G | Виробник : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 124A; Idm: 230A; 107W; DPAK Mounting: SMD Case: DPAK Drain-source voltage: 30V Drain current: 124A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Power dissipation: 107W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 230A кількість в упаковці: 1 шт |
товар відсутній |
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NTD4804NT4G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 1.43W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V |
товар відсутній |
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NTD4804NT4G | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 1.43W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V |
товар відсутній |
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NTD4804NT4G | Виробник : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 124A; Idm: 230A; 107W; DPAK Mounting: SMD Case: DPAK Drain-source voltage: 30V Drain current: 124A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET Power dissipation: 107W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 230A |
товар відсутній |