Технічний опис NTD32N06LT4G
Description: MOSFET N-CH 60V 32A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 16A, 5V, Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V.
Інші пропозиції NTD32N06LT4G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTD32N06LT4G | Виробник : ON Semiconductor | Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) DPAK T/R |
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NTD32N06LT4G | Виробник : ON Semiconductor | Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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NTD32N06LT4G | Виробник : onsemi |
Description: MOSFET N-CH 60V 32A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 16A, 5V Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
товар відсутній |