![NTB5405NT4G NTB5405NT4G](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4955/488%3B418B-04%3BB%3B3.jpg)
NTB5405NT4G onsemi
![ntb5405n-d.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 40V 116A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V
на замовлення 14400 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
332+ | 64.52 грн |
Відгуки про товар
Написати відгук
Технічний опис NTB5405NT4G onsemi
Description: MOSFET N-CH 40V 116A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 116A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V, Power Dissipation (Max): 3W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V.
Інші пропозиції NTB5405NT4G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
NTB5405NT4G | Виробник : ON Semiconductor |
![]() |
на замовлення 852 шт: термін постачання 21-30 дні (днів) |
|
![]() |
NTB5405NT4G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 32 V |
товар відсутній |