![NTB25P06T4G NTB25P06T4G](https://www.mouser.com/images/mouserelectronics/lrg/TO_263_D2PAK_3_SPL.jpg)
на замовлення 7994 шт:
термін постачання 315-324 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 171.14 грн |
10+ | 140.71 грн |
100+ | 97.33 грн |
800+ | 69.52 грн |
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Технічний опис NTB25P06T4G onsemi
Description: MOSFET P-CH 60V 27.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta), Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V, Power Dissipation (Max): 120W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V.
Інші пропозиції NTB25P06T4G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTB25P06T4G | Виробник : ON Semiconductor |
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товар відсутній |
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NTB25P06T4G | Виробник : ON Semiconductor |
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товар відсутній |
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NTB25P06T4G | Виробник : ON Semiconductor |
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товар відсутній |
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NTB25P06T4G | Виробник : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK Mounting: SMD On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of package: reel; tape Case: D2PAK Kind of channel: enhanced Gate-source voltage: ±15V Drain-source voltage: -60V Drain current: -27.5A кількість в упаковці: 800 шт |
товар відсутній |
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NTB25P06T4G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
товар відсутній |
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NTB25P06T4G | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
товар відсутній |
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NTB25P06T4G | Виробник : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK Mounting: SMD On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 120W Polarisation: unipolar Kind of package: reel; tape Case: D2PAK Kind of channel: enhanced Gate-source voltage: ±15V Drain-source voltage: -60V Drain current: -27.5A |
товар відсутній |