Технічний опис NSS60101DMR6T1G ON Semiconductor
Description: NSS60101DMR6T1G - 60 V, 1 A, LOW, Packaging: Bulk, Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 400mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V, Frequency - Transition: 200MHz, Supplier Device Package: SC-74, Part Status: Obsolete.
Інші пропозиції NSS60101DMR6T1G
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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NSS60101DMR6T1G | Виробник : onsemi |
Description: NSS60101DMR6T1G - 60 V, 1 A, LOW Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SC-74 Part Status: Obsolete |
товар відсутній |