NSBA124EF3T5G onsemi
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Bulk
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-1123
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Bulk
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-1123
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 293500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3523+ | 6.78 грн |
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Технічний опис NSBA124EF3T5G onsemi
Description: TRANS PREBIAS PNP 50V SOT1123, Packaging: Tape & Reel (TR), Package / Case: SOT-1123, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Supplier Device Package: SOT-1123, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 254 mW, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms.
Інші пропозиції NSBA124EF3T5G за ціною від 5.3 грн до 26.51 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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NSBA124EF3T5G | Виробник : ONSEMI |
Description: ONSEMI - NSBA124EF3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
на замовлення 293500 шт: термін постачання 21-31 дні (днів) |
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NSBA124EF3T5G | Виробник : onsemi | Digital Transistors SOT-1123 PBRT TRANSISTOR |
на замовлення 7489 шт: термін постачання 21-30 дні (днів) |
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NSBA124EF3T5G | Виробник : ON Semiconductor | Trans Digital BJT PNP 50V 100mA 297mW 3-Pin SOT-1123 T/R |
товар відсутній |
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NSBA124EF3T5G | Виробник : onsemi |
Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SOT-1123 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товар відсутній |
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NSBA124EF3T5G | Виробник : onsemi |
Description: TRANS PREBIAS PNP 50V SOT1123 Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SOT-1123 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
товар відсутній |