Технічний опис NGTB30N135IHR1WG ON Semiconductor
Description: IGBT 1350V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/200ns, Switching Energy: 630µJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 220 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1350 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 394 W.
Інші пропозиції NGTB30N135IHR1WG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NGTB30N135IHR1WG Код товару: 129042 |
Транзистори > IGBT |
товар відсутній
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NGTB30N135IHR1WG | Виробник : ON Semiconductor | Trans IGBT Chip N-CH 1350V 60A 394000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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NGTB30N135IHR1WG | Виробник : onsemi |
Description: IGBT 1350V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/200ns Switching Energy: 630µJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 220 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 120 A Power - Max: 394 W |
товар відсутній |