Технічний опис NGTB10N60R2DT4G ON Semiconductor
Description: IGBT 600V 20A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A, Supplier Device Package: DPAK, Td (on/off) @ 25°C: 48ns/120ns, Switching Energy: 412µJ (on), 140µJ (off), Test Condition: 300V, 10A, 30Ohm, 15V, Gate Charge: 53 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 72 W.
Інші пропозиції NGTB10N60R2DT4G
Фото | Назва | Виробник | Інформація |
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NGTB10N60R2DT4G | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: DPAK Td (on/off) @ 25°C: 48ns/120ns Switching Energy: 412µJ (on), 140µJ (off) Test Condition: 300V, 10A, 30Ohm, 15V Gate Charge: 53 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 72 W |
товар відсутній |
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NGTB10N60R2DT4G | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: DPAK Td (on/off) @ 25°C: 48ns/120ns Switching Energy: 412µJ (on), 140µJ (off) Test Condition: 300V, 10A, 30Ohm, 15V Gate Charge: 53 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 72 W |
товар відсутній |