Технічний опис NGD8201BNT4G ON Semiconductor
Description: IGBT 430V 15A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Logic, Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: -/4µs, Test Condition: 300V, 6.5A, 1kOhm, Part Status: Obsolete, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 430 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 115 W.
Інші пропозиції NGD8201BNT4G
| Фото | Назва | Виробник | Інформація |
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NGD8201BNT4G | Виробник : Littelfuse Inc. |
 Description: IGBT 430V 15A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: -/4µs Test Condition: 300V, 6.5A, 1kOhm Part Status: Obsolete Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 430 V Current - Collector Pulsed (Icm): 50 A Power - Max: 115 W |
товар відсутній |
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| NGD8201BNT4G | Виробник : onsemi |
IGBT Transistors N-CHANNEL IGNITION IGBT 2 |
товар відсутній |