Технічний опис NE85633-T1B-A California Eastern Labs
Description: RF TRANS NPN 12V 7GHZ SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11.5dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V, Frequency - Transition: 7GHz, Noise Figure (dB Typ @ f): 1.1dB @ 1GHz, Supplier Device Package: SOT-23-3, Part Status: Obsolete.
Інші пропозиції NE85633-T1B-A
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NE85633-T1B-A | Виробник : CEL |
 Description: RF TRANS NPN 12V 7GHZ SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11.5dB Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: SOT-23-3 Part Status: Obsolete |
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NE85633-T1B-A | Виробник : CEL |
Description: RF TRANS NPN 12V 7GHZ SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11.5dB Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: SOT-23-3 Part Status: Obsolete |
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NE85633-T1B-A | Виробник : CEL |
RF Bipolar Transistors NPN High Frequency |
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