Технічний опис NE85619-T1-A NEC
Description: RF TRANS NPN 12V 4.5GHZ SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 9dB, Power - Max: 100mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V, Frequency - Transition: 4.5GHz, Noise Figure (dB Typ @ f): 1.2dB @ 1GHz, Supplier Device Package: SOT-523.
Інші пропозиції NE85619-T1-A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NE85619-T1-A | Виробник : Renesas |
 Trans RF BJT NPN 12V 0.1A 100mW 3-Pin Ultra Super Mini-Mold T/R |
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NE85619-T1-A | Виробник : CEL |
Description: RF TRANS NPN 12V 4.5GHZ SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Supplier Device Package: SOT-523 |
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NE85619-T1-A | Виробник : CEL |
Description: RF TRANS NPN 12V 4.5GHZ SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Supplier Device Package: SOT-523 |
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NE85619-T1-A | Виробник : CEL |
RF Bipolar Transistors NPN Silicon Amp Oscillatr Transistor |
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