NCP81080DR2G ONSEMI
Виробник: ONSEMICategory: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Case: SO8
Topology: MOSFET half-bridge
Operating temperature: -40...140°C
Mounting: SMD
Supply voltage: 5.5...20V DC
Output current: -800...500mA
Type of integrated circuit: driver
Impulse rise time: 19ns
Pulse fall time: 17ns
Kind of integrated circuit: gate driver; high-side
на замовлення 810 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 86 грн |
| 6+ | 71.87 грн |
| 15+ | 57.07 грн |
| 42+ | 53.96 грн |
| 500+ | 52.99 грн |
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Технічний опис NCP81080DR2G ONSEMI
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 140°C (TJ), Voltage - Supply: 5.5V ~ 20V, Input Type: TTL, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 19ns, 17ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.2V, 1.8V, Current - Peak Output (Source, Sink): 500mA, 800mA, DigiKey Programmable: Not Verified.
Інші пропозиції NCP81080DR2G за ціною від 38.75 грн до 114.64 грн
| Фото | Назва | Виробник | Інформація |
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NCP81080DR2G | Виробник : ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8 Case: SO8 Topology: MOSFET half-bridge Operating temperature: -40...140°C Mounting: SMD Supply voltage: 5.5...20V DC Output current: -800...500mA Type of integrated circuit: driver Impulse rise time: 19ns Pulse fall time: 17ns Kind of integrated circuit: gate driver; high-side кількість в упаковці: 1 шт |
на замовлення 810 шт: термін постачання 14-21 дні (днів) |
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NCP81080DR2G | Виробник : onsemi |
Gate Drivers LOW-COST HIGH VLTG GATE DRIVER |
на замовлення 2088 шт: термін постачання 21-30 дні (днів) |
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NCP81080DR2G | Виробник : ON Semiconductor |
Gate Power Driver IC |
товар відсутній |
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NCP81080DR2G | Виробник : onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 5.5V ~ 20V Input Type: TTL Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 19ns, 17ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.8V Current - Peak Output (Source, Sink): 500mA, 800mA DigiKey Programmable: Not Verified |
товар відсутній |
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NCP81080DR2G | Виробник : onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 5.5V ~ 20V Input Type: TTL Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 19ns, 17ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.8V Current - Peak Output (Source, Sink): 500mA, 800mA DigiKey Programmable: Not Verified |
товар відсутній |