Технічний опис MURTA500120 GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 250A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A, Current - Reverse Leakage @ Vr: 25 µA @ 1200 V.
Інші пропозиції MURTA500120
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MURTA500120 | Виробник : GeneSiC Semiconductor |
 Description: DIODE MODULE GP 1.2KV 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 250A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 250 A Current - Reverse Leakage @ Vr: 25 µA @ 1200 V |
товар відсутній |
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MURTA500120 | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules 1200V 500A Si Super Fast Recovery |
товар відсутній |