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MURT40040R GeneSiC Semiconductor
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Description: DIODE MODULE GP 400V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard, Reverse Polarity
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 9580.57 грн |
10+ | 8198.68 грн |
25+ | 7822.74 грн |
50+ | 7085.18 грн |
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Технічний опис MURT40040R GeneSiC Semiconductor
Description: DIODE MODULE GP 400V 200A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 180 ns, Technology: Standard, Reverse Polarity, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 200 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.
Інші пропозиції MURT40040R
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MURT40040R | Виробник : GeneSiC Semiconductor |
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