Технічний опис MURS360HE3_A/I Vishay
Description: DIODE GEN PURP 600V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Qualification: AEC-Q101.
Інші пропозиції MURS360HE3_A/I
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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MURS360HE3_A/I | Виробник : Vishay |
 Diode Switching 600V 4A Automotive AEC-Q101 2-Pin SMC T/R |
товар відсутній |
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MURS360HE3_A/I | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
товар відсутній |
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MURS360HE3_A/I | Виробник : Vishay General Semiconductor |
Rectifiers 3.0 Amp 600V 50ns 35 Amp IFSM |
товар відсутній |