MURF10020 GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 50A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
Description: DIODE MODULE GP 200V 50A TO244
Packaging: Bulk
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 50A
Supplier Device Package: TO-244
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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Технічний опис MURF10020 GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 50A TO244, Packaging: Bulk, Package / Case: TO-244AB, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 50A, Supplier Device Package: TO-244, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.
Інші пропозиції MURF10020
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MURF10020 | Виробник : GeneSiC Semiconductor |
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