Технічний опис MUR4100E
Description: DIODE GEN PURP 1KV 4A AXIAL, Packaging: Bulk, Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 100 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A, Current - Reverse Leakage @ Vr: 25 µA @ 1000 V.
Інші пропозиції MUR4100E
Фото | Назва | Виробник | Інформація |
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MUR4100E | Виробник : onsemi |
![]() Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A Current - Reverse Leakage @ Vr: 25 µA @ 1000 V |
товар відсутній |
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MUR4100E | Виробник : onsemi |
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товар відсутній |