MUR30005CT GeneSiC Semiconductor
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Description: DIODE MODULE GP 50V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
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Технічний опис MUR30005CT GeneSiC Semiconductor
Description: DIODE MODULE GP 50V 150A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 90 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 150A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.
Інші пропозиції MUR30005CT
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MUR30005CT | Виробник : GeneSiC Semiconductor |
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