MUR2X120A06 GeneSiC Semiconductor

Description: DIODE GEN PURP 600V 120A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 120A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A, Current - Reverse Leakage @ Vr: 25 µA @ 600 V.