Технічний опис MUR10010CTR GeneSiC Semiconductor
Description: DIODE MODULE GP 100V 50A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 50A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.
Інші пропозиції MUR10010CTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| MUR10010CTR | Виробник : GeneSiC Semiconductor |
 Description: DIODE MODULE GP 100V 50A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товар відсутній |
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MUR10010CTR | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules SI S-FST RECOV 2TWR 50-600V 100A100P/70R |
товар відсутній |