Продукція > ONSEMI > MUN5312DW1T1
MUN5312DW1T1

MUN5312DW1T1 onsemi


MUN5311DW1T1_Series.pdf Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис MUN5312DW1T1 onsemi

Description: TRANS PREBIAS NPN/PNP SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363.

Інші пропозиції MUN5312DW1T1

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
MUN5312DW1T1 MUN5312DW1T1 Виробник : ON Semiconductor mun5311dw1t1-d-304363.pdf Bipolar Transistors - Pre-Biased 100mA Complementary
товар відсутній