Технічний опис MT53E1G32D2FW-046 AAT:C Micron Technology
Description: IC DRAM 32GBIT PAR 200TFBGA, Packaging: Tray, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 32Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 1G x 32, Grade: Automotive, Qualification: AEC-Q100.
Інші пропозиції MT53E1G32D2FW-046 AAT:C
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
|
MT53E1G32D2FW-046 AAT:C | Виробник : Micron Technology Inc. |
Description: IC DRAM 32GBIT PAR 200TFBGA Packaging: Tray Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 32Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 1G x 32 Grade: Automotive Qualification: AEC-Q100 |
товар відсутній |
|
MT53E1G32D2FW-046 AAT:C | Виробник : Micron | DRAM LPDDR4 PLASTIC Z42N |
товар відсутній |