MT3S113(TE85L,F) Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.8dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Active
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.8dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Active
на замовлення 1617 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
7+ | 50.36 грн |
10+ | 43.06 грн |
25+ | 38.91 грн |
100+ | 31.95 грн |
250+ | 28.04 грн |
500+ | 24.78 грн |
1000+ | 19.24 грн |
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Технічний опис MT3S113(TE85L,F) Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11.8dB, Power - Max: 800mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 5.3V, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Frequency - Transition: 12.5GHz, Noise Figure (dB Typ @ f): 1.45dB @ 1GHz, Supplier Device Package: S-Mini, Part Status: Active.
Інші пропозиції MT3S113(TE85L,F) за ціною від 17.56 грн до 54.32 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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MT3S113(TE85L,F) | Виробник : Toshiba | RF Bipolar Transistors RF Bipolar Transistor .1A 800mW |
на замовлення 2695 шт: термін постачання 21-30 дні (днів) |
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MT3S113(TE85L,F) | Виробник : Toshiba | Silicon-Germanium NPN Epitaxial Planar Type |
товар відсутній |
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MT3S113(TE85L,F) | Виробник : Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11.8dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 5.3V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Frequency - Transition: 12.5GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Supplier Device Package: S-Mini Part Status: Active |
товар відсутній |