MSMCJ8.0CA Microchip Technology
на замовлення 301 шт:
термін постачання 21-31 дні (днів)
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Технічний опис MSMCJ8.0CA Microchip Technology
Description: TVS DIODE 8VWM 13.6VC DO214AB, Packaging: Bulk, Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 110.3A, Voltage - Reverse Standoff (Typ): 8V, Supplier Device Package: DO-214AB (SMCJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 8.89V, Voltage - Clamping (Max) @ Ipp: 13.6V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Part Status: Active.
Інші пропозиції MSMCJ8.0CA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MSMCJ8.0CA | Виробник : MICROCHIP (MICROSEMI) |
 Category: Bidirectional SMD transil diodesDescription: Diode: TVS; 1.5kW; 9.36V; 110.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8V Breakdown voltage: 9.36V Max. forward impulse current: 110.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 50µA кількість в упаковці: 1 шт |
товар відсутній |
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MSMCJ8.0CA | Виробник : Microchip Technology |
Description: TVS DIODE 8VWM 13.6VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 110.3A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.89V Voltage - Clamping (Max) @ Ipp: 13.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товар відсутній |
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MSMCJ8.0CA | Виробник : Microchip / Microsemi |
ESD Suppressors / TVS Diodes TVS |
товар відсутній |
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MSMCJ8.0CA | Виробник : MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 9.36V; 110.3A; bidirectional; ±5%; DO214AB Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8V Breakdown voltage: 9.36V Max. forward impulse current: 110.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB Mounting: SMD Leakage current: 50µA |
товар відсутній |