MSMBJ51A MDE Semiconductor Inc
Виробник: MDE Semiconductor Inc
Description: TVS DIODE UP 51VRWM 82.4VC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: SMB (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE UP 51VRWM 82.4VC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: SMB (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
500+ | 110.44 грн |
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Технічний опис MSMBJ51A MDE Semiconductor Inc
Description: TVS DIODE UP 51VRWM 82.4VC, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 7.3A, Voltage - Reverse Standoff (Typ): 51V, Supplier Device Package: SMB (DO-214AA), Unidirectional Channels: 1, Voltage - Breakdown (Min): 56.7V, Voltage - Clamping (Max) @ Ipp: 82.4V, Power - Peak Pulse: 600W, Power Line Protection: No.
Інші пропозиції MSMBJ51A
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MSMBJ51A | Виробник : MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 7.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 59.7V кількість в упаковці: 1 шт |
товар відсутній |
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MSMBJ51A | Виробник : Microchip Technology |
Description: TVS DIODE 51VWM 82.4VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7.3A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: SMBJ (DO-214AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.4V Power - Peak Pulse: 600W Power Line Protection: No |
товар відсутній |
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MSMBJ51A | Виробник : Microchip Technology | ESD Suppressors / TVS Diodes TVS |
товар відсутній |
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MSMBJ51A | Виробник : MICROCHIP (MICROSEMI) |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 59.7V; 7.3A; unidirectional; ±5%; DO214AA Type of diode: TVS Mounting: SMD Tolerance: ±5% Case: DO214AA Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 7.3A Peak pulse power dissipation: 0.6kW Max. off-state voltage: 51V Breakdown voltage: 59.7V |
товар відсутній |