MSJP14N65A-BP Micro Commercial Components


msjp14n65ato-220abh.pdf Виробник: Micro Commercial Components
N-Channel Super-Junction Power MOSFET
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Технічний опис MSJP14N65A-BP Micro Commercial Components

Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A, Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V, Power Dissipation (Max): 147W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB (H), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 30 V.

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MSJP14N65A-BP MSJP14N65A-BP Виробник : Micro Commercial Co MSJP14N65A(TO-220AB(H)).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 30 V
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MSJP14N65A-BP MSJP14N65A-BP Виробник : Micro Commercial Components (MCC) MSJP14N65A_TO_220AB_H__-3423588.pdf MOSFET
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