MSC080SMA120S Microchip Technology
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 35A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
Description: SICFET N-CH 1200V 35A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 967.54 грн |
25+ | 858.99 грн |
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Технічний опис MSC080SMA120S Microchip Technology
Description: MICROCHIP - MSC080SMA120S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 35 A, 1.2 kV, 0.08 ohm, TO-268 (D3PAK), tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 35A, hazardous: false, rohsPhthalatesCompliant: YES, MSL: MSL 3 - 168 Stunden, usEccn: EAR99, Verlustleistung Pd: 182W, Gate-Source-Schwellenspannung, max.: 2.8V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 182W, Bauform - Transistor: TO-268 (D3PAK), Anzahl der Pins: 3Pin(s), Produktpalette: PW Series, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.08ohm, Rds(on)-Prüfspannung: 20V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.08ohm, SVHC: No SVHC (14-Jun-2023).
Інші пропозиції MSC080SMA120S за ціною від 700.45 грн до 1050.92 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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MSC080SMA120S | Виробник : MICROCHIP |
Description: MICROCHIP - MSC080SMA120S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 35 A, 1.2 kV, 0.08 ohm, TO-268 (D3PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES MSL: MSL 3 - 168 Stunden usEccn: EAR99 Verlustleistung Pd: 182W Gate-Source-Schwellenspannung, max.: 2.8V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 182W Bauform - Transistor: TO-268 (D3PAK) Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.08ohm Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: No SVHC (14-Jun-2023) |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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MSC080SMA120S | Виробник : Microchip Technology | MOSFET MOSFET SIC 1200 V 80 mOhm TO-268 |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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MSC080SMA120S | Виробник : Microchip Technology | Trans MOSFET SiC 1.2KV 35A Automotive 3-Pin(2+Tab) D3PAK Tube |
товар відсутній |
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MSC080SMA120S | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W Technology: SiC Mounting: SMD Case: D3PAK Power dissipation: 182W Gate charge: 64nC Kind of channel: enhanced Pulsed drain current: 87A Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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MSC080SMA120S | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 87A; 182W Technology: SiC Mounting: SMD Case: D3PAK Power dissipation: 182W Gate charge: 64nC Kind of channel: enhanced Pulsed drain current: 87A Drain-source voltage: 1.2kV Drain current: 25A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Polarisation: unipolar |
товар відсутній |