MMBTA42LT1HTSA1 Infineon Technologies
Виробник: Infineon TechnologiesTrans GP BJT NPN 300V 0.5A 360mW Automotive AEC-Q101 3-Pin SOT-23 T/R
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Технічний опис MMBTA42LT1HTSA1 Infineon Technologies
Description: TRANS NPN 300V 0.5A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V, Frequency - Transition: 70MHz, Supplier Device Package: PG-SOT23, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 360 mW.
Інші пропозиції MMBTA42LT1HTSA1
| Фото | Назва | Виробник | Інформація |
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MMBTA42LT1HTSA1 | Виробник : Infineon Technologies |
Trans GP BJT NPN 300V 0.5A 360mW Automotive 3-Pin SOT-23 T/R |
товар відсутній |
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MMBTA42LT1HTSA1 | Виробник : Infineon Technologies |
Description: TRANS NPN 300V 0.5A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 70MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 360 mW |
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MMBTA42LT1HTSA1 | Виробник : Infineon Technologies |
Description: TRANS NPN 300V 0.5A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 70MHz Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 360 mW |
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MMBTA42LT1HTSA1 | Виробник : Infineon Technologies |
Bipolar Transistors - BJT AF GP BJT NPN 300V 0.5A |
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