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MIXA150W1200TEH IXYS


MIXA150W1200TEH.pdf Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
Power dissipation: 695W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
кількість в упаковці: 1 шт
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Технічний опис MIXA150W1200TEH IXYS

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Application: motors; photovoltaics, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 450A, Power dissipation: 695W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Technology: Sonic FRD™; XPT™, Topology: IGBT three-phase bridge; NTC thermistor, Case: E3-Pack, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, кількість в упаковці: 1 шт.

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MIXA150W1200TEH Виробник : IXYS MIXA150W1200TEH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 450A
Power dissipation: 695W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT three-phase bridge; NTC thermistor
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
товар відсутній