MG15P12P2

MG15P12P2 Yangjie Technology


Виробник: Yangjie Technology
Description: Transistors - IGBTs - Modules P2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
на замовлення 3600 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
36+2377.71 грн
180+ 2162.46 грн
360+ 2035.2 грн
720+ 1790.6 грн
1440+ 1611.56 грн
3600+ 1492.2 грн
Мінімальне замовлення: 36
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Технічний опис MG15P12P2 Yangjie Technology

Description: Transistors - IGBTs - Modules P2, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A, NTC Thermistor: Yes, Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 155 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V.

Інші пропозиції MG15P12P2

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
MG15P12P2 Виробник : YANGJIE TECHNOLOGY MG15P12P2.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
кількість в упаковці: 1 шт
товар відсутній
MG15P12P2 Виробник : YANGJIE TECHNOLOGY MG15P12P2.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P2
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P2
Gate-emitter voltage: ±20V
Collector current: 15A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
товар відсутній