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MCU45N10HE3-TP

MCU45N10HE3-TP Micro Commercial Co

MCU45N10HE3(DPAK).pdf Виробник: Micro Commercial Co
Description: N-CHANNEL MOSFET, DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 72W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1026 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+65.26 грн
10+ 54.49 грн
100+ 37.7 грн
500+ 29.56 грн
1000+ 25.16 грн
Мінімальне замовлення: 5
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Технічний опис MCU45N10HE3-TP Micro Commercial Co

Description: N-CHANNEL MOSFET, DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A, Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, Power Dissipation (Max): 72W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

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Ціна без ПДВ
MCU45N10HE3-TP MCU45N10HE3-TP Виробник : Micro Commercial Co MCU45N10HE3(DPAK).pdf Description: N-CHANNEL MOSFET, DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 72W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
MCU45N10HE3-TP MCU45N10HE3-TP Виробник : Micro Commercial Components (MCC) MCU45N10HE3_DPAK_-3365950.pdf MOSFETs N-CHANNEL MOSFET, DPAK
товару немає в наявності