MCU18P10YHE3-TP Micro Commercial Components


mcu18p10yhe3dpak.pdf Виробник: Micro Commercial Components
MCU18P10YHE3-TP
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис MCU18P10YHE3-TP Micro Commercial Components

Description: Interface, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V, Power Dissipation (Max): 72W, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1051 pF @ 50 V.

Інші пропозиції MCU18P10YHE3-TP

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
MCU18P10YHE3-TP MCU18P10YHE3-TP Виробник : Micro Commercial Co MCU18P10YHE3(DPAK).pdf Description: Interface
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 72W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1051 pF @ 50 V
товар відсутній
MCU18P10YHE3-TP MCU18P10YHE3-TP Виробник : Micro Commercial Components (MCC) MCU18P10YHE3_DPAK_-3365895.pdf MOSFETs
товар відсутній