MCACLS330N04YAHE3-TP Micro Commercial Components (MCC)
на замовлення 5000 шт:
термін постачання 231-240 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 338.23 грн |
| 10+ | 279.76 грн |
| 25+ | 229.63 грн |
| 100+ | 196.62 грн |
| 250+ | 185.86 грн |
| 500+ | 175.09 грн |
| 1000+ | 149.98 грн |
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Технічний опис MCACLS330N04YAHE3-TP Micro Commercial Components (MCC)
Description: N-CHANNEL MOSFET,DFN5060-DSC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 75A, 10V, Power Dissipation (Max): 263W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DFN5060-DSC, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 115.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції MCACLS330N04YAHE3-TP
| Фото | Назва | Виробник | Інформація |
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MCACLS330N04YAHE3-TP | Виробник : Micro Commercial Co |
Description: N-CHANNEL MOSFET,DFN5060-DSC Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 75A, 10V Power Dissipation (Max): 263W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060-DSC Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 115.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 25 V Qualification: AEC-Q101 |
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MCACLS330N04YAHE3-TP | Виробник : Micro Commercial Co |
Description: N-CHANNEL MOSFET,DFN5060-DSC Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 75A, 10V Power Dissipation (Max): 263W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060-DSC Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 115.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |