MCAC80N08Y-TP Micro Commercial Co
Виробник: Micro Commercial CoDescription: MOSFET N-CH 80V 80A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5575 pF @ 40 V
на замовлення 1625 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.76 грн |
| 10+ | 77.82 грн |
| 100+ | 60.55 грн |
| 500+ | 48.16 грн |
| 1000+ | 39.24 грн |
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Технічний опис MCAC80N08Y-TP Micro Commercial Co
Description: MOSFET N-CH 80V 80A DFN5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V, Power Dissipation (Max): 35W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DFN5060, Part Status: Obsolete, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5575 pF @ 40 V.
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MCAC80N08Y-TP | Виробник : Micro Commercial Components |
Trans MOSFET N-CH 80V 80A 8-Pin DFN EP T/R |
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MCAC80N08Y-TP | Виробник : Micro Commercial Co |
Description: MOSFET N-CH 80V 80A DFN5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 35W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060 Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5575 pF @ 40 V |
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