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MBRB20H60CTHE3_B/P Vishay General Semiconductor - Diodes Division
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Description: DIODE ARR SCHOTT 60V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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Технічний опис MBRB20H60CTHE3_B/P Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 10A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-263AB, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 710 mV @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 60 V, Qualification: AEC-Q101.
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MBRB20H60CTHE3_B/P | Виробник : Vishay General Semiconductor |
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