MBR50035CTR GeneSiC Semiconductor
Виробник: GeneSiC SemiconductorDescription: DIODE MOD SCHOTT 35V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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Технічний опис MBR50035CTR GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 250A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 250A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 35 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 250 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Інші пропозиції MBR50035CTR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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MBR50035CTR | Виробник : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers SI PWR SCHOTTKY 2TWR 20-100V 500A 35P/25R |
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